Method of growing compound semiconductor layer
文献类型：专利
| 作者 | HIROTAKA, KIZUKI; YASUTOMO, KAJIKAWA |
| 发表日期 | 1996-07-10 |
| 专利号 | GB2296816A |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 英国 |
| 文献子类 | 发明申请 |
| 其他题名 | Method of growing compound semiconductor layer |
| 英文摘要 | The method includes epitaxially growing a III-V group compound semiconductor layer 2 including nitrogen (N) for group V element on a front surface of a semiconductor substrate 1 comprising cadmium telluride (CdTe). Therefore, the crystal lattices of the III-V group compound semiconductor layer 2 are lattice-matched with the crystal lattices of the CdTe semiconductor substrate 1 at a prescribed period, whereby the III-V group compound semiconductor layer 2 is epitaxially grown with high crystalline quality. The layer 2 is grown by MOCVD, MBE, GSMBE, CBE, VPE or ALE and may be used in a laser. |
| 公开日期 | 1996-07-10 |
| 申请日期 | 1995-12-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88337]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | HIROTAKA, KIZUKI,YASUTOMO, KAJIKAWA. Method of growing compound semiconductor layer. GB2296816A. 1996-07-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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