Semiconductor laser element
文献类型：专利
| 作者 | TANAKA TOSHIAKI; MINAGAWA SHIGEKAZU |
| 发表日期 | 1992-02-13 |
| 专利号 | JP1992043689A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To reduce an optical waveguide loss, to reduce a threshold current and to improve a temperature characteristic by a method wherein band gaps of a p-type AlGaInP optical waveguide layer and an n-type AlGaInP optical waveguide layer are made symmetric on both sides of an active layer. CONSTITUTION:An n-GaAs buffer layer 2, an n-(Aly2Ga1-y2)0.51In0.49P optical waveguide layer 3, an undoped (AlxGa1-x)0.51In0.49P active layer 4, a P-(Aly1 Ga1-y1)0.51In0.49P optical waveguide layer 5 and a P-Ga0.51In0.49P buffer layer 6 are epitaxially grown on an n-GaAs substrate The relationship between y1 of the composition y for Al in the optical waveguide layer doped with P-type impurities and y2 of the composition for Al in the optical waveguide layer doped with n-type impurities satisfies y1 + 0.2>y2>y1; the active layer is formed as a single quantum well structure. Zn, Mn or Be is used as the p-type impurities with which the optical waveguide layer is doped; Se is used as the n-type impurities. |
| 公开日期 | 1992-02-13 |
| 申请日期 | 1990-06-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88338]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | TANAKA TOSHIAKI,MINAGAWA SHIGEKAZU. Semiconductor laser element. JP1992043689A. 1992-02-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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