Semiconductor laser
文献类型：专利
| 作者 | KAISE KIKUO |
| 发表日期 | 1991-06-27 |
| 专利号 | JP1991151685A |
| 著作权人 | SONY CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To increase the flexibility of selecting high output power by enabling a light guide layer pattern to be selected independently of an active layer. CONSTITUTION:There are laminated a first cladding layer 1 of first conductivity type, a second conductivity type striped light guide layer 3, a striped active layer 4, and a second cladding layer 2 of second conductivity type. The active layer 4 is located at its end part 4a inside a laser resonator, withdrawn from an actual optical exit end surface 5, and the light guide layer 3 is formed into a pattern where its stripe width is gradually changed at least at its end on the side of the light exit end surface 5. Hereby, since a light guide pattern can be selected independently of the active layer, the flexibility of obtaining high power can be increased. |
| 公开日期 | 1991-06-27 |
| 申请日期 | 1989-11-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88339]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORP |
| 推荐引用方式 GB/T 7714 | KAISE KIKUO. Semiconductor laser. JP1991151685A. 1991-06-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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