Semiconductor laser element and manufacture thereof
文献类型：专利
| 作者 | IJICHI TETSURO; OKAMOTO HIROSHI |
| 发表日期 | 1991-10-01 |
| 专利号 | JP1991222488A |
| 著作权人 | FURUKAWA ELECTRIC CO LTD:THE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element and manufacture thereof |
| 英文摘要 | PURPOSE:To reduce an irregularity in a threshold currents and to improve manufacturing yield by forming a clad layer of InGaP, and inserting an etching stop layer made of a GaAs thin film into the clad layer. CONSTITUTION:An InGaP is lattice-matched to a GaAs, a ridge waveguide type distortion quantum well laser double heterostructure is formed by using properties in which the InGaP and the GaAs can be selectively etched at different speeds, the InGaP is used as clad layers 23, 25, 27, and the GaAs thin film is inserted as the etching stop layer 28 at the control position of the etching depth in a mesa forming step. Accordingly, when such a double heterostructure is selectively etched, a distance between the bottom of the mesa and the active layer can be accurately controlled. Thus, a semiconductor laser element in which an irregularity in its threshold current is reduced and its manufacturing yield can be improved, is obtained. |
| 公开日期 | 1991-10-01 |
| 申请日期 | 1990-01-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88343]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO LTD:THE |
| 推荐引用方式 GB/T 7714 | IJICHI TETSURO,OKAMOTO HIROSHI. Semiconductor laser element and manufacture thereof. JP1991222488A. 1991-10-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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