Outside resonator type variable wavelength semiconductor laser
文献类型：专利
| 作者 | SUZUKI TETSUYA; KAWAMO EIJI; NAGAI HARUO; TSUCHIYA TOSHIO |
| 发表日期 | 1991-09-17 |
| 专利号 | JP1991211781A |
| 著作权人 | ANRITSU CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Outside resonator type variable wavelength semiconductor laser |
| 英文摘要 | PURPOSE:To make it possible to increase a variable range of wavelength to a wider band by comprising a light source of monochrome coherent light which covers a wide range and an outside resonator and laying out in series an active layer whose composition comprises two types and more, which are different from each other, used as a semiconductor laser element having a wider light emitting range, which is the light source, along a wave guide passage or laminating the elements in the direction of their thickness. CONSTITUTION:Photons, generated in a first active layer 3 and a second active layer 4, are wave-guided along the first active layer 3 and the second active layer 4. One part of photons are reflected on a cleavage plane 5 and return to the first active layer 3 and the second active layer 4 while the other part of photons penetrate a reflection prevention film 6. The photons, which are penetrated the film, are collectled by a concave lens 7 and selectively reflected by a diffraction grating 8 and returns to the first active layer 3 and the second active layer 4 again, and get oscillated, making multiple reflection with the cleavage plane 5 and the diffraction grating 8. The oscillated light is outputted from the cleavage from the cleavage plane 5 and the diffraction grating 8 is controlled by a diffraction grating scanning means 9 so that only a required wavelength maybe selectively reflected thereon. |
| 公开日期 | 1991-09-17 |
| 申请日期 | 1990-01-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88347]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ANRITSU CORP |
| 推荐引用方式 GB/T 7714 | SUZUKI TETSUYA,KAWAMO EIJI,NAGAI HARUO,et al. Outside resonator type variable wavelength semiconductor laser. JP1991211781A. 1991-09-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。