Method for manufacturing a light-emitting device with a periodic structure in an active region
文献类型：专利
| 作者 | YAGI, HIDEKI |
| 发表日期 | 2007-11-01 |
| 专利号 | US20070253456A1 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Method for manufacturing a light-emitting device with a periodic structure in an active region |
| 英文摘要 | The invention provides a light-emitting device, where the active region thereof may be escaped from being damaged by the plasma process. The device is first formed with a semiconductor layer on the semiconductor substrate, next provided with an etching mask. Using the mask, the semiconductor layer on the substrate is dry-etched to form a periodic structure with grooves and mesas. The active regions are buried within the grooves by the OMVPE method. |
| 公开日期 | 2007-11-01 |
| 申请日期 | 2007-04-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88352]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | YAGI, HIDEKI. Method for manufacturing a light-emitting device with a periodic structure in an active region. US20070253456A1. 2007-11-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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