Semiconductor laser device
文献类型：专利
| 作者 | SHIMADA JUNICHI; UENISHI YUJI |
| 发表日期 | 1991-05-22 |
| 专利号 | JP1991120776A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To prevent distribution non-uniformity corresponding to the distribution non-uniformity of from being generated in a refractive index at a region on an inverse mesa part where current flows and on an inverse mesa part of a semiconductor layer by forming the mesa part where a third semiconductor layer is extended in stripe shape with a sufficient width and height for emission. CONSTITUTION:A semiconductor layer 5 as a clad layer constituting a laminated body 2 has a mesa part 5' with sufficient width W2' and height for enabling a laser light to be emitted in a single mode and with a strength pattern having a single peak property. Therefore, since the tip surface which is terminated within the semiconductor layer 5 as a clad layer of a semiconductor region 8 as a layer for current constriction does not necessarily have uniformity, laser light which is obtained by irradiating toward the outside can be obtained with a strength pattern in single mode and with a single peak property even if distribution non-uniformity is observed on the mesa part 5' of a semiconductor layer 5, a semiconductor layer 4 as an activation layer, and a semiconductor layer 3 as a clad layer, and current flowing to a region on the mesa part 5'. |
| 公开日期 | 1991-05-22 |
| 申请日期 | 1989-10-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88355]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | SHIMADA JUNICHI,UENISHI YUJI. Semiconductor laser device. JP1991120776A. 1991-05-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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