Semiconductor laser element and manufacture thereof
文献类型：专利
| 作者 | KAMIJO TAKESHI; HASHIMOTO AKIHIRO; KOBAYASHI MASAO |
| 发表日期 | 1987-11-25 |
| 专利号 | JP1987271482A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element and manufacture thereof |
| 英文摘要 | PURPOSE:To prevent the deterioration in the quality of a crystal by forming a current stopping layer an a substrate and continuously shaping each layer. CONSTITUTION:An N-type GaAs current stopping layer 11 is formed onto a P-type G As substrate 10, and a groove 11a is shaped through etching. A P-type GaAlAs clad layer 12, a GaAlAs active layer 13, an N-type GaAlAs waveguide layer 14 and an N-type GaAlAs clad layer 15 are grown continuously through an MOCVD method. Consequently, since absorption layers for stopping currents are not shaped among the waveguide layer and the clad layers, the GaAlAs layers are not brought into contact with the outside air during manufacture, thus preventing oxidation and the deterioration of the quality of a crystal. The clad layer 15 is etched with the exception of a section 15a corresponding to the groove 11a, and brought to thickness of approximately 5mum or less. Accordingly, since laser oscillation is generated only in the active layer on the groove section 11a and the projecting section 15a is thickened, beams generated are confined sufficiently, thus improving oscillation characteristics. |
| 公开日期 | 1987-11-25 |
| 申请日期 | 1986-05-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88357]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | KAMIJO TAKESHI,HASHIMOTO AKIHIRO,KOBAYASHI MASAO. Semiconductor laser element and manufacture thereof. JP1987271482A. 1987-11-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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