化合物半導体装置の製造方法
文献类型：专利
| 作者 | 藤井 卓也 |
| 发表日期 | 2000-05-19 |
| 专利号 | JP3066601B2 |
| 著作权人 | 富士通株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 化合物半導体装置の製造方法 |
| 英文摘要 | PURPOSE:To properly deposit the other layers on a finely corrugated InP substrate by a method wherein compound semiconductor layer preventing the thermal deformation of the substrate corrugations at the epitaxial deposition temperature of In1-xGaxAs1-yPy or In1-xGax-yAlyAs layer on the substrate is epitaxially deposited at lower temperature than said deposition temperature and then said layers are epitaxially deposited on the thermal deformation preventive layer. CONSTITUTION:The title compound semiconductor device is deposited on a corrugated n-type InP substrate 2. As for the first stage, the substrate temperature is raised up to about 400 deg.C. When the temperature is stabilized, the leading-in of PH3 gas is stopped and successively, e.g. (C2H5)3Ga and AsH3 are led-in to deposit a GaAs thin film 7 as a thermal deformation preventive layer. Next, as for the second stage, the feeding of group III material of the GaAs thin film 7 is stopped and then the substrate 2 is heated up to about 600 deg.C as the depositing temperature starting from an InGaAsP guide layer 3 to an InGaAsP active layer 4, an InP clad layer 5 and an InGaAsP collector layer 6. Next, the feeding of AsH3 gas is stopped and successively, the material of an n-type InGaAsP four element mixed crystal layer is fed to a reaction chamber to deposit the InGaAsP active layer 4, the p-type InP clad layer 5 and the p-type InGaAsP collector layer 6. |
| 公开日期 | 2000-07-17 |
| 申请日期 | 1990-09-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88367]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 富士通株式会社 |
| 推荐引用方式 GB/T 7714 | 藤井 卓也. 化合物半導体装置の製造方法. JP3066601B2. 2000-05-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。