Method of forming fine trench
文献类型：专利
| 作者 | IDOTA TAKESHI; TAKEUCHI YOSHINORI |
| 发表日期 | 1988-03-08 |
| 专利号 | JP1988053931A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Method of forming fine trench |
| 英文摘要 | PURPOSE:To obtain a stripe-shape fine trench with a stable width by making an InGaAsP layer with a thickness of 0.1-0.4mum grow on InP layers by epitaxial growth. CONSTITUTION:Three InP layers 2, 3 and 4 which have respectively different dopant and carrier concentrations are made to grow on the face (100) of an InP substrate 1 by epitaxial growth. Then an InGaAsP layer 5 whose thickness is limited to a range of 0.1-0.4mum is made to grow by epitaxial growth. In a process wherein the InGaAsP layer 5 is etched with H2SO4+H2O2+H2O with a dielectric film 6 in which a stripe-shape window is formed as a mask, the width W1 of the stripe-shape window formed in the dielectric film 6 is expanded to the width W2 of the stripe-shape window formed in the InGaAsP layer 5 by undercut. By selecting the thickness of the InGaAsP layer to be more than 0.1mum, the variations in the width of the stripe-shape trench can be reduced without requiring high grade etching time control. |
| 公开日期 | 1988-03-08 |
| 申请日期 | 1986-08-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88370]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | IDOTA TAKESHI,TAKEUCHI YOSHINORI. Method of forming fine trench. JP1988053931A. 1988-03-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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