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文献类型：专利
| 作者 | ONABE KENTARO |
| 发表日期 | 1993-08-12 |
| 专利号 | JP1993054279B2 |
| 著作权人 | NIPPON ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To contrive the realization of the semiconductor laser in a wavelength band of green by a method wherein the crystal ratio of a material and the structure made of II-VI group compound semiconductors and whose lattice constant is put in approximate matching in the interface of each layer are used for a substrate, the first clad layer, an active layer, and the second clad layer, respectively, in the titled device of double hereto junction structure. CONSTITUTION:ZnSe (EG=2.67eV) is used as the active layer ZnTe1-x-ySexSy (x=0.30, y=0.44) is used as the first and second clad layers 3 and 4, and n type and p type conductivities are given to them, respectively. Using n type GaAs for the substrate 2, the first clad layer 3 is deposited immediately thereon to a thickness of 2-3mum; thereafter, the n or p type active layer 1 is deposited by 0.1-0.2mum, further the second clad layer 4 by 2mum, and a p type GaAs cap layer 5 approx. by 1mum. Besides, a p-side electrode 6 and an n-side electrode 7 to yield the laser oscillation due to current injection are provided. In this structure, the distribution of the lattice constant alpha0 in the direction along the layer thickness, band gap energy EG, and optical dielectric constant epsilon is as graphs shown by B, C, and D. Thus, the semiconductor laser whereby the light emission of a wavelength of gree can be obtained can be realized. |
| 公开日期 | 1993-08-12 |
| 申请日期 | 1984-02-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88374]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | ONABE KENTARO. -. JP1993054279B2. 1993-08-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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