Manufacture of semiconductor device
文献类型：专利
| 作者 | TANAHASHI TOSHIYUKI; UMEO ITSUO |
| 发表日期 | 1984-02-04 |
| 专利号 | JP1984022383A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To prevent the deformation of the groove, etc. of the device, and to form the semiconductor device of excellent characteristics by properly selecting an atmospheric gas on liquid epitaxial growth. CONSTITUTION:The groove 3 is formed, a semiconductor wafer is set in a growth chamber brought to a nitrogen-gas atmospheric gas, the temperature of the wafer is elevated, and the state of the wafer is kept for 30min after the temperature rises to 620 deg.C. An n type In clad layer 4A, an InGaAsP active layer 5A and a p type InP clad layer 6 are grown continuously in an epitaxial manner. A p side electrode consisting of Au-Zn and an n side electrode consisting of Au-Sn are formed, and a semiconductor laser of 250(mum) resonator length is formed through cleavage. Accordingly, when the groove 3 or an irregularity is formed to a semiconductor layer and a semiconductor layer is liquid-grown on it, the deformation of the groove can be prevented by using an inert gas as the atmospheric gas, thus forming the semiconductor device having excellent characteristics with superior reproducibility. |
| 公开日期 | 1984-02-04 |
| 申请日期 | 1982-07-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88379]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | TANAHASHI TOSHIYUKI,UMEO ITSUO. Manufacture of semiconductor device. JP1984022383A. 1984-02-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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