半導体発光素子
文献类型：专利
| 作者 | 麻多 進 |
| 发表日期 | 1996-12-19 |
| 专利号 | JP2591333B2 |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体発光素子 |
| 英文摘要 | PURPOSE:To make small a serial resistance by a hetero interface and realize lower power consumption and high integration density by conducting high concentration doping in the vicinity of interface on the outside viewed from an active layer of a semiconductor having a wide forbidden band width which will become a potential barrier for the carrier controlling a current. CONSTITUTION:An N-type GaAs layer 11 and an N-type AlAs layer 12 are alternately stacked on a GaAs substrate 10, a non-doped InGaAs active layer 13 is also stacked through a guide layer consisting of a AlGaAs layer and a P-type AlAs layer 14 and P-type GaAs layer 15 are alternately stacked thereon. Film layers 11, 12, 14, 15 forming a wide reflecting film is set to 1/4 wavelength in order to satisfy multiple resonance reflecting condition. These multilayer film is formed by the molecular beam epitaxial method and the local doping is conducted in such a manner that the high concentration area is located outside the active layer of the wide forbidden band width layers 12, 14. As a result, a serial resistance is drastically reduced by about two digits in comparison with a uniform doping one. |
| 公开日期 | 1997-03-19 |
| 申请日期 | 1990-11-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88381]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | 麻多 進. 半導体発光素子. JP2591333B2. 1996-12-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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