Optical wave guide
文献类型：专利
| 作者 | TSUNEKAWA YOSHIFUMI |
| 发表日期 | 1990-10-09 |
| 专利号 | JP1990251909A |
| 著作权人 | SEIKO EPSON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical wave guide |
| 英文摘要 | PURPOSE:To obtain the optical wave guide of a smaller propagation loss by forming an optical wave guide layer and clad layers to sandwich this layer of a material matched in grating or nearly matched in grating to a substrate and a III-V compd. semiconductor having excellent crystallinity and laminating a II-VI compd. semiconductor thereon. CONSTITUTION:The AlxGa1-xAs clad layer 202, the AlyGa1-yAs optical wave guide layer 203 and the 2nd clad layer 204 of AlzGa1-zAs are successively laminated on the GaAs substrate 201 which is a III-V compd. semiconductor by a crystal growth method. After a thin dielectric film 206, such as silicon dioxide, is laminated thereon in succession thereto, the thin film is etched and thereafter, ZnSe which is the II-VI compd. semiconductor is grown. A polycrystalline ZnSe layer 208 is grown on the thin film 206 of the dielectrics and a single crystal ZnSe layer 207 is grown in the region off the above-mentioned layer. The etching of the polycrystalline ZnSe layer 208 ends early if the etching is executed. The remaining single crystalline ZnSe layer 207 constitutes the 3rd clad layer 205 of the ZnSe and the optical wave guide is formed. The optical wave guide having the excellent crystallinity and the small propagation loss is obtd. in this way. |
| 公开日期 | 1990-10-09 |
| 申请日期 | 1989-03-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88384]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORP |
| 推荐引用方式 GB/T 7714 | TSUNEKAWA YOSHIFUMI. Optical wave guide. JP1990251909A. 1990-10-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。