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文献类型：专利
| 作者 | TANETANI MOTOTAKA; MATSUI KANEKI; HOSOBANE HIROYUKI; MATSUMOTO AKIHIRO |
| 发表日期 | 1993-11-01 |
| 专利号 | JP1993079194B2 |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To grow a uniform and flat active layer and to obtain a stable optical mode by forming a second groove row disposed in a different direction on both sides of a first groove row arranged at a predetermined period. CONSTITUTION:An N-type Al0.1Ga0.9As first current narrowing layer 102 and an N-type GaAs surface protective layer 103 are sequentially grown on a P-type GaAs substrate 10 A groove 120 of 5mum of period is formed by photolithography technique and etching technique on the substrate. Grooves 120 of different direction from a resonator direction of the groove 120 are formed at both sides. Further, a P-type Al0.4Ga0.5As clad layer 104, an Al0.1Ga0.9As active layer 105, an N-type Al0.4Ga0.6As clad layer 106 and an N-type GaAs contact layer 107 are further continuously grown by LEP thereon. In this case, since the grooves 120, 121 are presented on the whole substrate, the growth of the layer 104 can be uniformly performed at any part when the width, depth and pitch of the grooves 121 are controlled. |
| 公开日期 | 1993-11-01 |
| 申请日期 | 1987-06-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88385]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | TANETANI MOTOTAKA,MATSUI KANEKI,HOSOBANE HIROYUKI,et al. -. JP1993079194B2. 1993-11-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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