Manufacture of semiconductor device
文献类型：专利
| 作者 | NISHITANI YORIMITSU; TANAHASHI TOSHIYUKI |
| 发表日期 | 1984-03-08 |
| 专利号 | JP1984041825A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To prevent the degradation of the shape of a groove by selectively forming the recessed section from the surface of an indium-gallium-arsenic or indium-gallium-arsenic-phosphorus layer, thermally keeping a base body, removing the layer and liquid-growing a semiconductor layer in the recessed section. CONSTITUTION:The (100) face of an N type InP crystal is used as the upper surface of a substrate 11, and the groove 14, which reaches the substrate 11 while penetrating an In1-xGaxAs1-yPy layer 13 formed through liquid epitaxial growth method and a P type InP layer 12, has a V-shaped section and extends in the direction of the crystal, is formed. A meltback solution is received on the substrate side of a first clad layer growing solution, and brought into contact with the semiconductor base body for approximately one sec at a temperature of approximately 650 deg.C to dissolve and remove the layer 13, and an N type InP first clad layer 15, a non-doped InGaAsP active layer 16, a P type InP second clad layer 17 and a P type InGaAsP cap layer 18 are grown in succession. Accordingly, the shoulder of the groove of the layer 12 is not made gentle and InP does not deposit on the bottom of the groove 14, and a growing layer such as the InGaAsP active layer 16 is formed to a normal shape. |
| 公开日期 | 1984-03-08 |
| 申请日期 | 1982-08-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88388]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | NISHITANI YORIMITSU,TANAHASHI TOSHIYUKI. Manufacture of semiconductor device. JP1984041825A. 1984-03-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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