半導体レーザ装置およびその製造方法
文献类型：专利
| 作者 | 工藤 裕章; 瀧口 治久; 猪口 和彦; 中西 千登勢; 菅原 聰 |
| 发表日期 | 1998-07-31 |
| 专利号 | JP2810518B2 |
| 著作权人 | シャープ株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ装置およびその製造方法 |
| 英文摘要 | PURPOSE:To obtain a distributed feedback type semiconductor laser device which is small in oscillation threshold current and able to oscillate stably in both a single lateral mode and a single axis mode by a method wherein a diffraction grating is provided to the surface of an optical guide layer formed on an active layer. CONSTITUTION:In a semiconductor laser device, as a current constriction structure where a current is injected is provided only to a stripe groove 15 formed on an N-type GaAs current block layer 9, an active region containing an Al0.13 Ga0.87As active layer 3 is provided under the stripe groove 15, laser rays which are induced there and made to expand vertical to a resonator are trapped by an N-type Al0.5Ga0.5As first clad layer 2 and a P-type Al0.7Ga0.3As second clad layer 6. Laser rays oozing out to a P-type Al0.25Ga0.75As optical guide layer 5 are optically fed back from a diffraction grating 14 corresponding to its ratio to start a continuous laser oscillation. On the other hand, laser rays expanding laterally are absorbed by an N-type GaAs current block layer 9, so that they are trapped as wide as the stripe groove 15. |
| 公开日期 | 1998-10-15 |
| 申请日期 | 1990-09-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88394]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | シャープ株式会社 |
| 推荐引用方式 GB/T 7714 | 工藤 裕章,瀧口 治久,猪口 和彦,等. 半導体レーザ装置およびその製造方法. JP2810518B2. 1998-07-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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