Method of fabricating semiconductor laser device
文献类型：专利
| 作者 | TAKAHASHI KAZUHISA |
| 发表日期 | 1992-03-14 |
| 专利号 | CA2051254A1 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 加拿大 |
| 文献子类 | 发明申请 |
| 其他题名 | Method of fabricating semiconductor laser device |
| 英文摘要 | A method of fabricating a semiconductor laser device includesdisposing a lower cladding layer, a superlattice active layer,an upper cladding layer, and a contact layer in the named orderon a substrate, disposing, on resonator end surfaces, filmscontaining a material which can cause disorder of the semiconductorsuperlattice structure at a high temperature, and causing currentto flow between the substrate and the contact layer to cause laseroscillations. The laser oscillations cause laser light to begenerated, which is absorbed at the resonator end surfaces. Theresonator end surfaces are locally heated due to absorption oflaser light, whereby the disorder-causing material is diffusedinto the resonator end surfaces and the semiconductor superlatticestructure in the vicinity of the resonant end surfaces isdisordered to thereby form window regions. |
| 公开日期 | 1992-03-14 |
| 申请日期 | 1991-09-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88398]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | TAKAHASHI KAZUHISA. Method of fabricating semiconductor laser device. CA2051254A1. 1992-03-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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