Manufacture of semiconductor laser element
文献类型：专利
| 作者 | KAWABATA YOSHIO; NISHIJIMA YOSHITO; FUKUDA HIROKAZU; YAMAMOTO KOUSAKU |
| 发表日期 | 1983-04-04 |
| 专利号 | JP1983056378A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser element |
| 英文摘要 | PURPOSE:To obtain the laser element, in which there are few crystal defects and oscillation threshold currents thereof are small, by changing the growth temperature of an active layer in the middle and controlling impurity diffusion from a buffer layer. CONSTITUTION:A sliding member 24 with a liquid reservoir 25 for a buffer layer forming material, a liquid reservoir 26 for an active layer forming material, an empty liquid reservoir 27 and a liquid reservoir 28 for a top layer forming material is mounted onto a supporting base 21 into which a substrate 22 for epitaxial growth and a thin plate 23 for a dummy are buried. The sliding member 24 is moved in the B direction, the liquid reservoirs 25, 26 are rested onto the substrate 22 in succession, and the buffer layer and one part of the active layer are shaped. The temperature of an epitaxial growth device is dropped under a state that the empty liquid reservoir 27 is rested onto the substrate 22, the liquid reservoir 26 is rested onto the substrate 22 again, and the residual section of the active layer is formed. A P-N junction is shaped between the high- temperature growth section and low-temperature growth section of the active layer at that time. The liquid reservoir 28 is rested onto the substrate 22, and the crystal layer of a top layer is shaped. |
| 公开日期 | 1983-04-04 |
| 申请日期 | 1981-09-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88402]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | KAWABATA YOSHIO,NISHIJIMA YOSHITO,FUKUDA HIROKAZU,et al. Manufacture of semiconductor laser element. JP1983056378A. 1983-04-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。