Semiconductor laser
文献类型：专利
| 作者 | YAGI KATSUMI |
| 发表日期 | 1988-12-27 |
| 专利号 | JP1988318187A |
| 著作权人 | 三洋電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To dispense with an ion beam irradiation so as to improve a manufacturing yield by a method wherein a semiconductor laser is provided with an active layer of a quantum well structure and a means which applies a magnetic field in the direction of thickness of the active layer. CONSTITUTION:A first clad layer 2 is laid on the primary surface of an n-type GaAs substrate 1 and an active layer 3 is formed on the almost central part thereof. A second clad layer 4 and a carrier layer 5 are laid on the active layer 3, then an ohmic electrode 8 is built thereon. An insulating layer 7 is coated on. A superconducting ring 10 is formed on the insulating layer 7 so as to surround the ohmic electrode 8 and a magnet field is applied in the thick- wise direction of the active layer 3. A carrier in the active layer 3 is three- dimensionally quantized through a quantum well structure and the magnetic field applied in the thick-wise direction. |
| 公开日期 | 1988-12-27 |
| 申请日期 | 1987-06-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88404]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三洋電機株式会社 |
| 推荐引用方式 GB/T 7714 | YAGI KATSUMI. Semiconductor laser. JP1988318187A. 1988-12-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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