Surface-emitting laser diode with tunnel junction and fabrication method thereof
文献类型：专利
| 作者 | UEKI, NOBUAKI; SAKURAI, JUN; OTOMA, HIROMI; YAMAMOTO, MASATERU |
| 发表日期 | 2006-10-12 |
| 专利号 | US20060227835A1 |
| 著作权人 | FUJI XEROX CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Surface-emitting laser diode with tunnel junction and fabrication method thereof |
| 英文摘要 | A surface emitting semiconductor laser diode of a tunnel junction type includes a semiconductor substrate, a first reflector, a second reflector, an active region disposed in series between the first and second reflectors, and a tunnel junction region disposed in series between the first and second reflectors. The tunnel junction region includes a first semiconductor layer of a first conductive type and a second semiconductor layer of a second conductive type that forms a junction with the first semiconductor layer, the first semiconductor layer being composed of a supper-lattice layer that at least partially includes aluminum and is partially oxidized. |
| 公开日期 | 2006-10-12 |
| 申请日期 | 2005-10-27 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88405]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJI XEROX CO., LTD. |
| 推荐引用方式 GB/T 7714 | UEKI, NOBUAKI,SAKURAI, JUN,OTOMA, HIROMI,et al. Surface-emitting laser diode with tunnel junction and fabrication method thereof. US20060227835A1. 2006-10-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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