Semiconductor laser
文献类型：专利
| 作者 | OHATA TOYOJI; NARUI HIRONOBU; MORI YOSHIFUMI |
| 发表日期 | 1990-03-05 |
| 专利号 | JP1990065288A |
| 著作权人 | SONY CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To easily enable the formation of a semiconductor laser of a low threshold value by a method wherein a BH type semiconductor laser is made to have an active layer which has a refractive index difference in a lateral direction through a single crystal growth, and a current block layer is formed on both the sides of the active layer. CONSTITUTION:Both the sides of an active layer 3 are regulated not only by the extension of a slope 2a of a 111B crystal plane occurred in a first conductivity type clad layer 2 but also by a first conductivity type current block layer 5. That is, the current block layer 5 is formed on both sides of the active layer 3 or near both the sides of it sandwiching the stripe-like active layer 3 on a mesa-shaped protrusion 12. By this setup, a current is sufficiently constructed, so that the current does not expand and is concentrated onto the active layer 3 on the mesa-shaped protrusion 12. And, the current block layer 5 is formed between a second conductivity type clad layers 4 and 6 to regulate both the sides of the active layer 3 which become automatically active regions, so that a selective etching process, which is performed after the end of a continuous crystal growth, can dispense with and a manufacturing process can be simplified. |
| 公开日期 | 1990-03-05 |
| 申请日期 | 1988-08-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88419]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORP |
| 推荐引用方式 GB/T 7714 | OHATA TOYOJI,NARUI HIRONOBU,MORI YOSHIFUMI. Semiconductor laser. JP1990065288A. 1990-03-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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