Semiconductor light emitting device
文献类型：专利
| 作者 | NISHI HIROSHI |
| 发表日期 | 1984-01-10 |
| 专利号 | JP1984003987A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device which can oscillate multi- modes of longitudinal mode by a method wherein the constituents of an active layer provided between clad layers are distributed at the fixed ratio of composition. CONSTITUTION:The clad layer 2 is formed on a substrate 1 by a molecular beam epitaxial growing method, the composition of the molecular beam B is varied while moving a shutter 10 in the direction A, thus epitaxial growth is performed, and accordingly the active layer 3 composed of a Ga1-XAlXAs layer of different ratios of composition is formed. The composition of the active layer 3 is set, that is X=0.20 in the region 31, X=0.18 in the region 32, and X=0.17 in the region 33. The clad layer 4 and a cap layer 5 are grown, and zinc is selectively diffused from the surface the cap layer 5, resulting in the formation of a stripe P type region 6. The semiconductor laser device is completed by forming a P-side electrode 8 and an N-side electrode 7. Since the active layer 3 consists of three regions, and the ratio (x) of composition is different each, the refractive indexes are different, and therefore the spectrum distribution of longitudinal and multi-modes can be obtained. |
| 公开日期 | 1984-01-10 |
| 申请日期 | 1982-06-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88428]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | NISHI HIROSHI. Semiconductor light emitting device. JP1984003987A. 1984-01-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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