Formation of diffraction grating
文献类型：专利
| 作者 | SUGIMOTO HIROSHI; MATSUI TERUHITO; OTSUKA KENICHI; ABE YUJI; OISHI TOSHIYUKI |
| 发表日期 | 1989-01-06 |
| 专利号 | JP1989002008A |
| 著作权人 | 三菱電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Formation of diffraction grating |
| 英文摘要 | PURPOSE:To form simply a diffraction grating in antiphase to a resist shape on a substrate by forming a coating film layer on a diffraction grating layer formed of a resin without causing damage on the diffraction grating layer, forming a mask of an antiphase diffraction grating after removing a part on the diffraction grating, and etching a substrate using the mask. CONSTITUTION:A diffraction grating of a resist 2 comprising a resin material patterned on a substrate 1 is obtd. when a photosensitive resist comprising the resin material is subjected to interference fringes exposure and developed. In this case, when the process is carried out by the electron cyclotron resonance plasma CVD process, an SiNx layer 3 is formed on the resist 2 at low temp. without causing damage on the resist 2. The layer 3 on the resist 2 is removed by etching with buffer hydrofluoric acid utilizing the difference of etching speed. When the resist 2 is removed, a diffraction grating being in antiphase to the resist 2 by the effect of the layer 3 is formed. When this diffraction grating is used as mask, a diffraction grating being in antiphase to a resist shape is formed simply on the substrate |
| 公开日期 | 1989-01-06 |
| 申请日期 | 1987-06-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88437]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三菱電機株式会社 |
| 推荐引用方式 GB/T 7714 | SUGIMOTO HIROSHI,MATSUI TERUHITO,OTSUKA KENICHI,et al. Formation of diffraction grating. JP1989002008A. 1989-01-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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