Semiconductor laser devices
文献类型：专利
| 作者 | KAWANISHI, HIDENORI; YAMAGUCHI, MASAHIRO; HAYASHI, HIROSHI; MORIMOTO, TAIJI; KANEIWA, SHINJI |
| 发表日期 | 1992-11-19 |
| 专利号 | EP0306314B1 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 欧洲专利局 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser devices |
| 英文摘要 | A semiconductor laser device comprises a p-type semiconductor substrate (11) and a multi-layered crystal structure with an active layer (14) for laser-oscillating operation, the multi-layered crystal structure being disposed on the substrate (11) and having a striped channel region (100) through which current is supplied to the active layer and a light-absorbing region positioned outside of the channeled region by which a difference between the amount of light to be absorbed inside of the channeled region and the amount of light to be absorbed outside of the channeled region is created, which causes a difference in the effective refractive index of the active layer, resulting in an optical waveguide in the active layer, wherein the light-absorbing region is constituted by an n-type semiconductor substance, but a portion of the n-type semiconductor substance positioned in the vicinity of at least one of both facets is replaced by a p-type semiconductor substance (31, 111). |
| 公开日期 | 1992-11-19 |
| 申请日期 | 1988-09-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88440]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | KAWANISHI, HIDENORI,YAMAGUCHI, MASAHIRO,HAYASHI, HIROSHI,et al. Semiconductor laser devices. EP0306314B1. 1992-11-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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