Semiconductor laser device
文献类型：专利
| 作者 | KAYA, SHUSUKE; NINOMIYA, TAKAO; OKUBO, MICHIO; UCHIYAMA, SEIJI |
| 发表日期 | 2004-09-21 |
| 专利号 | US6795480 |
| 著作权人 | FURUKAWA ELECTRIC CO., LTD., THE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A semiconductor laser device is formed by laminating optical confinement layers and active layers so as to dispose each of said active layers between said optical confinement layers, wherein one of the opposite ends perpendicular to the junction planes of the individual layers in the semiconductor multi-layer film is coated with a low reflection film and the other of the ends is coated with a high reflection film, wherein the low reflection film is an Al2O3 film having a resistivity of 1x10Omega.m or more, preferably 1x10Omega.m or more, and having a stoichiometric ratio composition, which is deposited by, for example, an electron cyclotron resonance sputtering process. The present invention has realized a semiconductor laser device exhibiting a prolonged duration of operating life and having high driving reliability, which is advantageous in that a catastrophic optical damage hardly occurs and a lowering of the optical output after driving at a constant current is suppressed, and thus, it is preferably used as an optical transmitter for the optical communication. |
| 公开日期 | 2004-09-21 |
| 申请日期 | 2000-09-15 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88449]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO., LTD., THE |
| 推荐引用方式 GB/T 7714 | KAYA, SHUSUKE,NINOMIYA, TAKAO,OKUBO, MICHIO,et al. Semiconductor laser device. US6795480. 2004-09-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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