Semiconductor laser
文献类型：专利
| 作者 | UENO YOSHIYASU |
| 发表日期 | 1992-02-27 |
| 专利号 | JP1992061185A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To reduce threshold current density and hence driving current density by forming a double heterostructure on a semiconductor substrate including at least a cladding layer and an active layer both of a first conductivity type and a second conductivity type cladding layer, and altering band gap energy of a semiconductor mixed crystal constructing the active layer continuously and periodically perpendicularly to a semiconductor substrate surface. CONSTITUTION:An active layer 1 is formed with an AlGaInP semiconductor mixed crystal layer having a continuos and periodical composition, and held between a p-AlGaInP cladding layer 2 and an n-AlGaInP cladding layer 3 and epitaxially grown on a GaAs substrate 6. Further, with the coordinate (z) taken perpendicularly to the semiconductor substrate surface, an Al composition x of the active layer AlGaInP satisfies x=x0 sin(2pi.z/z0)+x1 (where z0<200 Angstrom and x1 is a constant). |
| 公开日期 | 1992-02-27 |
| 申请日期 | 1990-06-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88454]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | UENO YOSHIYASU. Semiconductor laser. JP1992061185A. 1992-02-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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