Semiconductor laser
文献类型：专利
| 作者 | SAGARA MINORU |
| 发表日期 | 1986-06-28 |
| 专利号 | JP1986141190A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To contrive to improve the manufacturing yield of an internal current constriction type semiconductor laser having the lateral optical waveguide mechanism by a method wherein the active layer is formed into the sectional configuration roughly similar to that of the stripe-like current groove in the laser. CONSTITUTION:An N-type SaAs current stopping layer 22 is made to grow by crystallization of a P-type GaAs substrate 21 by an MOVPE method, and after that, a groove 23 with the flat bottom is formed by a photolithography process and an etching process. Then, a crystal growth in a multilayer hetero junction structure consisting of a P-type Al0.3Ga0.7As clad layer 24, a GaAs active layer 25, an N-type Al0.3Ga0.7As clad layer 26 and an N-type GaAs ohmic layer 27 is performed in order by an MOVPE method, and after an N-side electrode 28 and a P-side electrode 29 are formed, these are formed into a chip. By this way, the configuration of the active layer 25 becomes a figure roughly similar to that of the groove 23, and moreover, as the groove 23 is never deformed, the semiconductor laser can be favorably manufactured in reproducibility and in uniformity as well, thereby enabling to improve the manu facturing yield thereof. |
| 公开日期 | 1986-06-28 |
| 申请日期 | 1984-12-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88459]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | SAGARA MINORU. Semiconductor laser. JP1986141190A. 1986-06-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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