半導体レ-ザ装置
文献类型：专利
| 作者 | 浜田 健; 伊藤 国雄; 渋谷 隆夫; 粂 雅博 |
| 发表日期 | 1994-01-26 |
| 专利号 | JP1994007634B2 |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザ装置 |
| 英文摘要 | PURPOSE:To prevent the deterioration due to non-emitting recombination at end faces, by providing a substrate with a projection such that the length of the projection terminates near and before the laser end faces and providing a blocking layer with ridges such that the depth of the groove defined between the ridges does not reach the substrate near the end faces but terminates within the blocking layer. CONSTITUTION:A P-type GaAs substrate 1 is provided with a projection 10 having a height of 2mum, a width of 12mum and a length of 200mum, the length being short for reaching the end faces of the substrate A blocking layer 2 is grown on the surface of the substrate 1 such that it has a thickness of 0.8mum on the projection and forms a flat surface. The blocking layer 2 is etched to form two upright parallel ridges 9 each of which has a height of 5mum and a width of 20mum and also to form a 4mum wide groove directly over the projection 10. The depth of the groove between the ridges 9 is as deep as to reach the P-type substrate 1 directly over the projection 10 while, in the regions where there is no projection, the depth of the groove terminates in the blocking layer 2 as well as the flat portions of the blocking layer outside the ridges 9. A first layer, P-type Ga1-yAlyAs clad layer 3 is grown thereon to have a thickness of about 0.3mum over the ridges 9. A second non-doped Ga1-xAlxAs active layer 4, a third N-type Ga1-yAlyAs clad layer 5 and a fourth N-type GaAs electrode forming layer 6 are grown sequentially to have thicknesses of about 0.05mum, 5mum and 2mum, respectively. |
| 公开日期 | 1994-01-26 |
| 申请日期 | 1985-10-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88462]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | 浜田 健,伊藤 国雄,渋谷 隆夫,等. 半導体レ-ザ装置. JP1994007634B2. 1994-01-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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