Semiconductor laser
文献类型：专利
| 作者 | TSUCHIYA TOSHIO; MISE KAZUAKI |
| 发表日期 | 1986-04-08 |
| 专利号 | JP1986067978A |
| 著作权人 | ANRITSU CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain the laser having a stable lateral mode by a method wherein a buffer layer and a clad layer are grown on a III-V group compound semiconductor crystal and this laminar body is an inversed mesa structure in which a width of an active layer located in the middle of the body is narrowed and the layer is recessed and the first and second buried layers surround the periphery of the mesa structure with filling said recess. CONSTITUTION:On a P type InP substrate 21 having (100) plane, a P type InP buffer layer 22, an InGaAs active layer 23, and an N type InP clad layer 24 are laminated and epitaxially grown to form a double hetero structure. Nextly a mask of an insulating film 25 along a direction is arranged on the layer 24 and an inversed mesa structure in which the bottom part is recessed into the layer 22 is obtained by etching. After that, selective etching is done by use of another etching solution to narrow a width of the active layer 23 and to produce horizontal grooves 26a and 26b on both ends of said active layer. The first N type InP layer 27 and the second P type InP layer 28 are deposited on both sides of the inversed mesa structure with filling said grooves thereby offering the laser which operates at a low threshold value. |
| 公开日期 | 1986-04-08 |
| 申请日期 | 1984-09-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88465]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ANRITSU CORP |
| 推荐引用方式 GB/T 7714 | TSUCHIYA TOSHIO,MISE KAZUAKI. Semiconductor laser. JP1986067978A. 1986-04-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。