Planar emission type semiconductor laser
文献类型：专利
| 作者 | TSURUTA TORU; TOYODA YUKIO |
| 发表日期 | 1990-06-22 |
| 专利号 | JP1990162786A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Planar emission type semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a planar emission semiconductor laser which is close to a point light source by a method wherein a laser ray projecting region of a DBR region formed of a secondary diffractive grating is made narrow. CONSTITUTION:A secondary diffractive grating 7 is formed on the whole face of a wafer excluding an active region. Furthermore, an etching is executed using a stripe mask to form a ridge which penetrates through the active region and the DBR region. Thereafter, an insulating film of an SiO2 film 8 is formed on the whole face of the wafer, and then a window is provided above the ridge of the active region. A Cr/Au 9 is evaporated and then a part of the Cr/Au 9 on the DBR region is separated off to take out a planar emission component. Lastly, the wafer is thinly abraded, and then an AuGe/Ni/Au 10 is evaporated on the rear side. The front and the rear end face are formed through cleavage. The DBR region is 10mum or less in length. Moreover, an SiN film is deposited through a plasma CVD, and then a gold film is deposited on the SiN film to serve as a high reflection film. |
| 公开日期 | 1990-06-22 |
| 申请日期 | 1988-12-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88474]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | TSURUTA TORU,TOYODA YUKIO. Planar emission type semiconductor laser. JP1990162786A. 1990-06-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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