Optical semiconductor device
文献类型：专利
| 作者 | KONO MASAKI |
| 发表日期 | 1989-04-18 |
| 专利号 | JP1989099277A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical semiconductor device |
| 英文摘要 | PURPOSE:To eliminate the necessity of assembling a monitoring photodiode in a separate step and to reduce the irregularity in the output current of a monitor by composing a laser diode and a photodiode monolithically. CONSTITUTION:An N-type GaAs contact layer 2, an N-type AlGaAs upper clad layer 3, a P-type AlGaAs active layer 4, a P-type AlGaAs lower clad layer 5, and an N-type GaAs current blocking layer 6 are formed between an N-type electrode 1 and a P-type electrode 8. Then, the rear end face of a stripe laser in a P-type GaAs substrate formed in this manner is etched to the layer 6. With a P-N junction composed by exposing by the etching as a solar cell it is employed as a monitoring photodiode of a laser light. |
| 公开日期 | 1989-04-18 |
| 申请日期 | 1987-10-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88479]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KONO MASAKI. Optical semiconductor device. JP1989099277A. 1989-04-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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