Semiconductor laser element
文献类型：专利
| 作者 | HAYAKAWA TOSHIROU; MIYAUCHI NOBUYUKI; YANO MORICHIKA |
| 发表日期 | 1984-01-10 |
| 专利号 | JP1984004191A |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To obtain a useful semiconductor element which has long lifetime even in a short wavelength range by forming an active region at the specific distance from either a semiconductor laser mounting surface or the surface opposite to the mounting surface. CONSTITUTION:In order to form a current narrowing stripe structure on a P type GaAs substrate 1, an N type GaAs current limiting layer 9 is grown, and a V-shaped groove 10 which reaches the substrate 1 from the surface of the layer 9 is formed by etching. Then, a P type Ga0.44Al0.56As clad layer 2, a Ga0.8Al0.2As active layer 3, an N type Ga0.44Al0.56As clad layer 4 and an N type GaAs cap layer 5 are sequentially laminated by a continuously epitaxially growing method. A P type electrode 11 and an N type electrode 12 are respectively deposited on the substrate 1 and the layer 5. The thickness of the cap layer is formed to be 10mum or larger, and the N type electrode 12 side is mounted with In solder material on a copper heat sink. In this manner, the distortion which is introduced into the active layer is suppressed, thereby improving the lifetime of operation. |
| 公开日期 | 1984-01-10 |
| 申请日期 | 1982-06-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88480]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | HAYAKAWA TOSHIROU,MIYAUCHI NOBUYUKI,YANO MORICHIKA. Semiconductor laser element. JP1984004191A. 1984-01-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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