Vertical cavity surface emitting laser
文献类型：专利
| 作者 | HOOPER, STEWART EDWARD; HEFFERNAN, JONATHAN |
| 发表日期 | 2004-11-25 |
| 专利号 | US20040233963A1 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Vertical cavity surface emitting laser |
| 英文摘要 | A semiconductor laser device (15) comprises a substrate (16). A first mirror structure (17), an active region (18) and a second mirror structure (19) are disposed in this order over the substrate (16). The second mirror structure has a first portion (28) having a first width (W1) and a second portion (29) having a second width (W2) less than the first width (W1). The first portion (28) of the second mirror structure (19) is disposed between the second portion (29) of the second mirror structure (19) and the active region (18). An etching stop layer (23) is provided between the first portion (28) of the second mirror structure (19) and the second portion (29) of the second mirror structure (19). A contact (24) is disposed on the surface of the first portion of the second mirror structure, where it is not covered by the second portion of the second mirror structure. |
| 公开日期 | 2004-11-25 |
| 申请日期 | 2004-03-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88481]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | HOOPER, STEWART EDWARD,HEFFERNAN, JONATHAN. Vertical cavity surface emitting laser. US20040233963A1. 2004-11-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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