Method of forming compound semiconductor structure
文献类型：专利
| 作者 | AKITA KENZO; TANETANI MOTOTAKA; SUGIMOTO YOSHIMASA; HIDAKA HIROMI |
| 发表日期 | 1991-08-26 |
| 专利号 | JP1991195071A |
| 著作权人 | 光技術研究開発株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Method of forming compound semiconductor structure |
| 英文摘要 | PURPOSE:To avoid the contamination of a compound semiconductor surface by a method wherein a series of substrate treatment processes and crystal growth processes are successively performed under controlled atmospheres without exposing the compound semiconductor to the air. CONSTITUTION:A film forming chamber 31 is evacuated by a vacuum pump and its pressure is kept at 1X10Torr or less. First gas, or high purity H2S gas, is introduced into the chamber 31 and, at the same time, a halogen lamp light 52 is applied to a wafer surface to form a sulfide film 15 on a GaAs guide layer 13. After the pressure of the film forming chamber 31 is lowered to 1X10Torr or less by the vacuum pump, the wafer whose surface is coated with the sulfide film 15 is transferred into an etching chamber 33. Second gas, or chlorine gas 53, is introduced into the chamber 33 and, at the same time, an electron beam is applied to the wafer surface to form a line-and-space pattern on the sulfide film 15. Then an AlxGa1-xAs upper cladding layer 16 and a GaAs oxidation-proof layer 17 are built up. With this constitution, the contamination of the semiconductor surface by the air can be avoided. |
| 公开日期 | 1991-08-26 |
| 申请日期 | 1989-12-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88483]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 光技術研究開発株式会社 |
| 推荐引用方式 GB/T 7714 | AKITA KENZO,TANETANI MOTOTAKA,SUGIMOTO YOSHIMASA,et al. Method of forming compound semiconductor structure. JP1991195071A. 1991-08-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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