Semiconductor laser device
文献类型:专利
| 作者 | UCHIDA, SATOSHI; KUSUNOKI, KAORU; MUSHIAGE, MASATO |
| 发表日期 | 1993-08-10 |
| 专利号 | US5235609 |
| 著作权人 | REEVES BROTHERS INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A semiconductor laser device comprises: an active layer; a lower clad layer provided below the active layer; an upper clad layer provided above the active layer; and a current blocking layer, provided above the upper clad layer, for limiting an active region of the active layer in a direction along a width to make the active region of a striped form which has a wide portion and a narrow portion. According to the device, coherence of an oscillated laser beam is reduced, thereby to decrease a feedback induced noise when used for a pickup of an optical information recording/reproducing apparatus. |
| 公开日期 | 1993-08-10 |
| 申请日期 | 1991-10-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88488] ![]() |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | REEVES BROTHERS INC. |
| 推荐引用方式 GB/T 7714 | UCHIDA, SATOSHI,KUSUNOKI, KAORU,MUSHIAGE, MASATO. Semiconductor laser device. US5235609. 1993-08-10. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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