Semiconductor laser device
文献类型：专利
| 作者 | KURODA TAKAO; UMEDA JUN-ICHI; SAITO KATSUTOSHI; KAJIMURA TAKASHI |
| 发表日期 | 1985-11-07 |
| 专利号 | DE3172507D1 |
| 著作权人 | HITACHI LTD. |
| 国家 | 德国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | The invention refers to a semiconductor laser device having a strip-shaped impurity-diffused region disposed in at least parts of semiconductor layers, consisting of a first semiconductor layer having an active region, a second semiconductor layer lying in contact with the first semiconductor layer and a surface semiconductor layer, whereby the impurity-diffused region having the same conductivity type as that of the second semi-conductor layer extends at least from the surface semi-conductor layer to a depth close to the first semiconductor layer, and whereby an electrode is disposed on the impurity-diffused region so that a forward current may flow from the electrode through the impurity-diffused region to the first semiconductor layer. …The invention is characterized in that there is disposed between the surface semiconductor layer (6) and the second semiconductor layer (4) a third semiconductor layer (5) having a diffusion rate for the impurity forming the impurity-diffused region (7, 71) lower than within the second semiconductor layer (4). |
| 公开日期 | 1985-11-07 |
| 申请日期 | 1981-06-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88491]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD. |
| 推荐引用方式 GB/T 7714 | KURODA TAKAO,UMEDA JUN-ICHI,SAITO KATSUTOSHI,et al. Semiconductor laser device. DE3172507D1. 1985-11-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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