Nitride semiconductor laser device
文献类型：专利
| 作者 | TSUDA, YUHZOH; OHTA, MASATAKA; FUJISHIRO, YOSHIE |
| 发表日期 | 2011-12-27 |
| 专利号 | US8085826 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Nitride semiconductor laser device |
| 英文摘要 | A nitride semiconductor laser device includes an n-type AlGaN clad layer, a GaN layer, a first InGaN light guide layer, a light-emitting layer, a second InGaN light guide layer, a nitride semiconductor intermediate layer, a p-type AlGaN layer, and a p-type AlGaN clad layer stacked in this order on a nitride semiconductor substrate, wherein the n-type AlGaN clad layer has an Al composition ratio of 3-5% and a thickness of 8-2.5 μm; the first and second InGaN light guide layers have an In composition ratio of 3-6%; the first light guide layer has a thickness of 120-160 nm and greater than that of the second light guide layer; and the p-type AlGaN layer is in contact with the p-type clad layer and has an Al composition ratio of 10-35% and greater than that of the p-type clad layer. |
| 公开日期 | 2011-12-27 |
| 申请日期 | 2009-11-12 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88493]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | TSUDA, YUHZOH,OHTA, MASATAKA,FUJISHIRO, YOSHIE. Nitride semiconductor laser device. US8085826. 2011-12-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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