Quantum well type semiconductor laser
文献类型：专利
| 作者 | ASAHI HAJIME; WAKITA KOUICHI; KUROIWA KOUICHI; KAWAMURA YUUICHI |
| 发表日期 | 1985-10-14 |
| 专利号 | JP1985202980A |
| 著作权人 | NIPPON DENSHIN DENWA KOSHA |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Quantum well type semiconductor laser |
| 英文摘要 | PURPOSE:To increase efficiency of laser oscillation, by forming first and second clad layers each having a wider forbidden band width than that of the active layer on both the face of the active layer consisting of a quantum well layer and a barrier layer. CONSTITUTION:An active layer 1 is constituted by a quantum well layer L1 of In1-x1-y1Gax1Aly1As whose lattice is matched with that of InP and a barrier layer L2 having a wider forbidden band width than that of the quantum well layer 1 and consisting of In1-x2-y2Gax2Aly2As (y1 |
| 公开日期 | 1985-10-14 |
| 申请日期 | 1984-03-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88495]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENSHIN DENWA KOSHA |
| 推荐引用方式 GB/T 7714 | ASAHI HAJIME,WAKITA KOUICHI,KUROIWA KOUICHI,et al. Quantum well type semiconductor laser. JP1985202980A. 1985-10-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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