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文献类型：专利
| 作者 | MATSUI KANEKI; MATSUMOTO AKIHIRO; TANETANI MOTOTAKA |
| 发表日期 | 1993-01-22 |
| 专利号 | JP1993005391B2 |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser array device oscillatable at a single 0 deg. phase mode up to high output by a method wherein the filament parts for laser oscillation and the current stripe constructions of the device are disposed in an array making to be correlated mutually. CONSTITUTION:An N-type GaAs current block layer 2 is grown to a P-type GaAs substrate 1 having a (001) face as a crystal growth face. Then grooves 101 of the plural number having branch and combination parts are formed to the substrate 1 thereof. Then a P-type AlxGal-xAs clad layer 3, a P-type or an N-type AlxGa1-xAs active layer 4, an N-type AlxGal-xAs clad layer 5 and an N type GaAs contact layer 6 are grown respectively up to the necessary tyicknesses on the substrate 1 having the grooves 101 of the plural number thereof. Then an electrode 10 is formed in parallel with the direction of filaments having width (alpha) on the surface of the wafer, and after then the part other than the electrode 10 is etched up to the middle of the N-type clad layer 5 to form a mesa stripe 20. Width (alpha) of the mesa stripe 20 thereof is set smaller than width of the whole of the filaments. Then an SiNx film 9 having the necessary thickness is formed on the surface, and a hole for leading out of the electrode is dug only to the electrode part 10. The substrate side is lapped to make thickness of the whole of the wafer to have the necessary value, and a whole surface electrode is formed also on the substrate side. |
| 公开日期 | 1993-01-22 |
| 申请日期 | 1986-05-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88497]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | MATSUI KANEKI,MATSUMOTO AKIHIRO,TANETANI MOTOTAKA. -. JP1993005391B2. 1993-01-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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