Semiconductor laser element
文献类型：专利
| 作者 | IWASE MASAYUKI; IRIKAWA MASANORI |
| 发表日期 | 1992-05-13 |
| 专利号 | JP1992139782A |
| 著作权人 | FURUKAWA ELECTRIC CO LTD:THE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To improve temperature characteristics, and decrease threshold current, by constituting each of the first and the third semiconductor layers of single or multiple quantum well structure, and making the width of a quantum well layer of the third semiconductor layer larger than that of the first semiconductor layer. CONSTITUTION:On an N-InP substrate 11, the following are laminated in order; an N-InGaAsP (lambdag=05mum) clad layer 12, a first active layer 13 composed of multiple quantum well structure, a P-InP intermediate clad layer 14, a second active layer 15 composed of P-InGaAsP (lambdag=24mum), and a P-InP clad layer 16. The active layer 13 has a multiple quantum well structure constituted of well layers and barrier layers, and the oscillation wavelength is lambdaL=3mum. Said well layers are composed of InGaAsP (lambdag=34mum). Said barrier layers are composed of InGaAsP (lambdag=30mum). In this manner, the forbidden bandwidth of the active layer 15 is set to be lambdag=2mum which is larger than the oscillation wavelength of the active layer 13 by about 50meV. Thereby the absorption of laser light of the active layer 13 which is to be caused by the active layer 15 can be made nearly equal to zero. |
| 公开日期 | 1992-05-13 |
| 申请日期 | 1990-09-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88498]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO LTD:THE |
| 推荐引用方式 GB/T 7714 | IWASE MASAYUKI,IRIKAWA MASANORI. Semiconductor laser element. JP1992139782A. 1992-05-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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