Frequency-stabilized semiconductor laser oscillator
文献类型：专利
| 作者 | KAEDE, KAZUHISA; RANGU, HIROYOSHI |
| 发表日期 | 1984-12-19 |
| 专利号 | EP0128297A2 |
| 著作权人 | NEC CORPORATION |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Frequency-stabilized semiconductor laser oscillator |
| 英文摘要 | The semiconductor laser comprises a semiconductor laser diode (100) with a first optical waveguide layer section (123), a first electrode (113) for injecting electric current to the first optical waveguide layer section (123), a second optical waveguide layer section (122) and a second electrode (114). The second optical waveguide layer section (122) is connected to the first optical waveguide layer section (123) and has a controllable refractive index. The second electrode (114) provides a control signal for controlling the refractive index of the second optical waveguide layer section (122). An electric circuit applies modulation signals to the first electrode (113) in order to modulate optical output from the semiconductor laser diode (100) and supplies control signals having a predetermined proportionate relation in amplitude and a predetermined phase difference with said modulation signals for every frequency to the second electrode (114). This semiconductor laser does not substantially fluctuate its oscillation frequencies even if the number of carrier electrons to be injected into the active layer is varied. |
| 公开日期 | 1984-12-19 |
| 申请日期 | 1984-04-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88501]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORPORATION |
| 推荐引用方式 GB/T 7714 | KAEDE, KAZUHISA,RANGU, HIROYOSHI. Frequency-stabilized semiconductor laser oscillator. EP0128297A2. 1984-12-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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