Semiconductor laser
文献类型：专利
| 作者 | OSHIMA HIROYUKI; IWANO HIDEAKI; KOMATSU HIROSHI; TSUNEKAWA YOSHIFUMI |
| 发表日期 | 1986-07-03 |
| 专利号 | JP1986145886A |
| 著作权人 | SEIKO EPSON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a double hetero-structure semiconductor laser of Si system constructed on a Si substrate by a method wherein two sorts of Si(GaP) thin films with different composition ratio are laminated alternately, and an active layer with super-lattice structure and two clad layers mainly composed of GaP are provided. CONSTITUTION:A first clad layer, an active layer, and a second clad layer are formed on a single crystalline Si substrate 101 to constitute a double hetero- structure semiconductor laser. The first clad layer is made of, for example, n type GaP 102 and may contain a small amount of Si. The second clad layer is also made of p type GaP 105 and may contain a small amount of Si. The active layer which performs the laser oscillation is made by laminating Si1-x(GaP)x thin films (0<=x<=1) 104 and Si1-y(GaP)y thin films (0<=y<=1, xnot equal to y) 103 alternately so as to form a super-lattice structure. |
| 公开日期 | 1986-07-03 |
| 申请日期 | 1984-12-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88506]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORP |
| 推荐引用方式 GB/T 7714 | OSHIMA HIROYUKI,IWANO HIDEAKI,KOMATSU HIROSHI,et al. Semiconductor laser. JP1986145886A. 1986-07-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。