Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | TSURUTA TORU |
| 发表日期 | 1990-01-31 |
| 专利号 | JP1990028985A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain a single mode laser easily by selectively removing a striped mesa section and forming a constricted inclination, the width of an internal reflecting section of which is reduced. CONSTITUTION:An N-InP clad layer 2, an N-InGaAsP active layer 3 and a P-InP clad layer 4 are grown onto an N-InP substrate A mask having sides in the [010] direction and the [010] direction in the constriction of an internal reflecting section 12 is shaped by photoetching an SiO2 insulating film, and a striped mesa section 13 is formed through etching by using an etchant at the mixing ratio of HCl:CH3COOH:H2O2=3:1: Consequently, the etching surface of the constriction section is made perpendicular to the substrate. A P-InP layer 5, an N-InP layer 6 and a P-InP layer 7 are grown as a current blocking layer by second growth, and a P-InGaAsP cap layer 8 is grown. Since an active layer is formed and the active layer is removed through etching, chemical etching is facilitated, and the active layer does not curve the section of the internal reflecting surface, thus easily manufacturing a single longitudinal mode layer having low threshold currents in the same extent as a normal semiconductor laser. |
| 公开日期 | 1990-01-31 |
| 申请日期 | 1988-07-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88515]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | TSURUTA TORU. Semiconductor laser and manufacture thereof. JP1990028985A. 1990-01-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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