面発光型半導体レーザ
文献类型：专利
| 作者 | 森 克己; 浅賀 達也; 岩野 英明 |
| 发表日期 | 2001-10-19 |
| 专利号 | JP3240636B2 |
| 著作权人 | セイコーエプソン株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 面発光型半導体レーザ |
| 英文摘要 | PURPOSE:To reduce a reactive current and to obtain a necessary optical output by forming a buried layer around a columnar semiconductor layer as a II-VI compound semiconductor epitaxial layer having a high resistance, and specifying an opening area of a light emitting side electrode. CONSTITUTION:An n-type GaAs buffer 103 and a distributed reflection type multilayer film mirror 108 are formed on an n-type GaAs substrate 102. Further, a clad layer 105, an active layer 106, a clad layer 107, and a p-type Al0.1Ga0.9As contact layer 108 are sequentially epitaxially grown. After an SiO2 layer 112 is formed on the surface, the layer 107 is etched to the midway except a columnar light emitting unit covered with a hard baking resist 113. After the resist 113 is removed, a ZnS0.06Se0.94 layer 109 having a resistance of 1GOMEGA or more is buried and grown. An SiO2/alpha-Si dielectric multilayer film mirror 111 is formed on the surface, and removed except the region of the light emitting unit. The mirror 111 is formed of an area of 10-90% of the surface area of the layer 108, and an electrode 110 is formed on the surface except the mirror. |
| 公开日期 | 2001-12-17 |
| 申请日期 | 1991-09-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88517]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | セイコーエプソン株式会社 |
| 推荐引用方式 GB/T 7714 | 森 克己,浅賀 達也,岩野 英明. 面発光型半導体レーザ. JP3240636B2. 2001-10-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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