Semiconductor laser device
文献类型：专利
| 作者 | ONO, KENICHI; TADA, HITOSHI |
| 发表日期 | 1998-05-26 |
| 专利号 | US5757835 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A semiconductor laser device includes a structure in which a first conductivity AlGaInP first cladding layer, an active layer, a second conductivity type AlGaInP second cladding layer, a second conductivity type AlGaInP intermediate layer, and a second conductivity type AlGaInP third cladding layer are successively epitaxially grown on a first conductivity type GaAs semiconductor substrate. The intermediate layer is within a profile of light produced in the active layer and includes AlGaInP layers having a band gap energy smaller than the band gap energy of the second cladding layer and the third cladding layer and larger than the band gap energy of the active layer. The intermediate layer has a multi-layer structure in which (AlxGa1-x)InP layers (0 |
| 公开日期 | 1998-05-26 |
| 申请日期 | 1997-01-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88519]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | ONO, KENICHI,TADA, HITOSHI. Semiconductor laser device. US5757835. 1998-05-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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