Semiconductor laser
文献类型：专利
| 作者 | HIUGA SUSUMU; MIHASHI YUTAKA |
| 发表日期 | 1989-05-31 |
| 专利号 | JP1989138780A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a high output laser ray in a fundamental mode from a wide active region by a method wherein an active region is made to be multistage, the width of a part of the active region is controlled to be certain value adaptable only to a fundamental mode, and the whole active region is structured so as to oscillate in a fundamental mode. CONSTITUTION:An active region 7 is composed of an AlGaAs active layer 9 provided with a wide active region, a second active layer 10 whose active region is controlled to be a certain value in width W' adaptable only to a fundamental mode, and an intermediate clad layer 11 of AlGaAs which has such a composition ratio of Al and a thickness that the above two active regions can be made to combine optically with each other. Two active regions are optically combined, wherefore a higher order mode that is zero in an electrical intensity at a horizontal center of the first active region is hardly excited due to the gain concerned when the first active region is optically combined with the second active region which is allowed only to oscillate in a fundamental mode that has an electrical intensity peak at a horizontal center of the second active region even if the first order mode is adaptable to the first active region because of its large width W, so that the active regions oscillate only in a fundamental mode. |
| 公开日期 | 1989-05-31 |
| 申请日期 | 1987-11-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88524]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | HIUGA SUSUMU,MIHASHI YUTAKA. Semiconductor laser. JP1989138780A. 1989-05-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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