Manufacture of 3-5 family compound semiconductor element
文献类型：专利
| 作者 | MIZUTANI TAKASHI |
| 发表日期 | 1982-11-18 |
| 专利号 | JP1982187936A |
| 著作权人 | NIPPON DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of 3-5 family compound semiconductor element |
| 英文摘要 | PURPOSE:To perform surface process without contaminating a clean epitaxial growth surface, by achieving a substrate crystal process followed by epitaxial growth in a manufacturing equipment of the same III-V family compound semiconductor element. CONSTITUTION:In a manufacturing equipment of III-V family compound semiconductor elements, a substrate crystal 4 exposed to methylhalide atmosphere at a selective etching chamber 2 is selectively irradiated by a laser beam 9. The substrate crystal 4 is etched selectively. More than one layer of epitaxial growth is achieved continuously on the substrate crystal 4 at a gaseous epitaxial growth chamber 1 in the same manufacturing equipment, followed by the etching process. |
| 公开日期 | 1982-11-18 |
| 申请日期 | 1981-05-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88530]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENKI KK |
| 推荐引用方式 GB/T 7714 | MIZUTANI TAKASHI. Manufacture of 3-5 family compound semiconductor element. JP1982187936A. 1982-11-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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