中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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文献类型:专利

作者MATSUEDA HIDEAKI; NAKAMURA MICHIHARU
发表日期1990-01-23
专利号JP1990003314B2
著作权人KOGYO GIJUTSUIN
国家日本
文献子类授权发明
其他题名-
英文摘要PURPOSE:To enable laser oscillation at a low threshold value by flattening the surface as a whole, so as to stably simplify the oscillation mode, by a method wherein a laser element having a CPS type bent active region is built in, so as to be contained in a recess previsouly provided in a semi-insulation substrate. CONSTITUTION:After the part other than two-stage recesses 21 and 22 provided in the GaAs semi-insulatiin substrate 1 is coated with an SiO2 film 3, crystal- growth is accomplished in the recesses 21 and 22 with conductive GaAs2 doped with N type Se by the MOCVD method. Next, a groove 16 formed at the position corresponding to the recess 22, the second recess being formed more widely by including it; thereafter doublehetero structual crystal growth is carried out by the MOCVD method again with SiO2 and the like as a mask, in such a manner that the second recess is exactly filled, and accordingly a known semiconductor laser is constructed. In this case, an active layer 5 bends at the part of the groove 16. Then, Zn is diffused by corresponding to the laser active region, thus forming a current path 8, an electronic circuit part is formed by the side of the laser part, and both are connected.
公开日期1990-01-23
申请日期1983-08-23
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/88535]  
专题半导体激光器专利数据库
作者单位KOGYO GIJUTSUIN
推荐引用方式
GB/T 7714
MATSUEDA HIDEAKI,NAKAMURA MICHIHARU. -. JP1990003314B2. 1990-01-23.

入库方式: OAI收割

来源:西安光学精密机械研究所

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