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文献类型：专利
| 作者 | MATSUEDA HIDEAKI; NAKAMURA MICHIHARU |
| 发表日期 | 1990-01-23 |
| 专利号 | JP1990003314B2 |
| 著作权人 | KOGYO GIJUTSUIN |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To enable laser oscillation at a low threshold value by flattening the surface as a whole, so as to stably simplify the oscillation mode, by a method wherein a laser element having a CPS type bent active region is built in, so as to be contained in a recess previsouly provided in a semi-insulation substrate. CONSTITUTION:After the part other than two-stage recesses 21 and 22 provided in the GaAs semi-insulatiin substrate 1 is coated with an SiO2 film 3, crystal- growth is accomplished in the recesses 21 and 22 with conductive GaAs2 doped with N type Se by the MOCVD method. Next, a groove 16 formed at the position corresponding to the recess 22, the second recess being formed more widely by including it; thereafter doublehetero structual crystal growth is carried out by the MOCVD method again with SiO2 and the like as a mask, in such a manner that the second recess is exactly filled, and accordingly a known semiconductor laser is constructed. In this case, an active layer 5 bends at the part of the groove 16. Then, Zn is diffused by corresponding to the laser active region, thus forming a current path 8, an electronic circuit part is formed by the side of the laser part, and both are connected. |
| 公开日期 | 1990-01-23 |
| 申请日期 | 1983-08-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88535]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOGYO GIJUTSUIN |
| 推荐引用方式 GB/T 7714 | MATSUEDA HIDEAKI,NAKAMURA MICHIHARU. -. JP1990003314B2. 1990-01-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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