Manufacture of semiconductor laser element
文献类型：专利
| 作者 | WADA HIROSHI; HORIKAWA HIDEAKI; OGAWA HIROSHI; KAWAI YOSHIO |
| 发表日期 | 1988-10-18 |
| 专利号 | JP1988250884A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser element |
| 英文摘要 | PURPOSE:To obtain a DFB laser element which can operate at a high output by growing a quaternary mixed crystal of GaInAsP by a liquid epitaxial growing method on a bent active layer of a semiconductor laser element having a double hetero structure, and thinly forming an optical guide layer having a flat surface. CONSTITUTION:When a semiconductor laser element of a double hetero structure having current constriction layers 22, 23 at both sides of a V-shaped groove 34, and a clad layer 25, an active layer 27, an optical guide layer 28 and a clad layer 29 formed in on the groove 24 is formed, a quaternary mixed crystal of GaInAsP is grown by a liquid epitaxial growing method on the bent layer 27, and the layer 28 having a flat surface is thinned as much as possible, thereby forming a wavy grating 28a on the flat surface. Thus, leakage currents to the layers 22, 23 are small to operate at a high output, and a flat grown surface can be rapidly obtained even on the bent surface, thereby forming a stable distributed feedback DFB type laser element. |
| 公开日期 | 1988-10-18 |
| 申请日期 | 1987-04-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88536]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | WADA HIROSHI,HORIKAWA HIDEAKI,OGAWA HIROSHI,et al. Manufacture of semiconductor laser element. JP1988250884A. 1988-10-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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